发明名称 Method Of Forming An Interdigitated Back Contact Solar Cell
摘要 A method of forming an interdigitated back contact solar cell is described. The method uses a deposition process to create a doped glass layer on the substrate, which, when diffused, created either the emitter or back surface fields. The deposition process may also create an oxide layer on top of the doped glass layer. This oxide layer serves as a mask for a subsequent ion implant. This ion implant directs ions having the opposite conductivity of the doped glass layer into exposed regions of the substrate. A thermal process is used to diffuse the dopant from the doped glass layer into the substrate and repair any damage caused by the ion implant.
申请公布号 US2016005914(A1) 申请公布日期 2016.01.07
申请号 US201414323035 申请日期 2014.07.03
申请人 Varian Semiconductor Equipment Associates, Inc. 发明人 Bateman Nicholas PT
分类号 H01L31/18;H01L31/0224;H01L31/0236;H01L31/032;H01L31/0376 主分类号 H01L31/18
代理机构 代理人
主权项 1. A method of forming an interdigitated back contact solar cell, comprising: forming a patterned glass layer doped with a first species on a back surface of a substrate, wherein regions of the substrate are exposed; implanting ions of a second species into the substrate, the second species having a conductivity opposite that of the first species, wherein the ions implant the exposed regions but not the regions covered by the patterned glass layer; and performing a thermal process to diffuse dopant from the patterned doped glass layer into the substrate.
地址 Gloucester MA US