| 摘要 |
A semiconductor device according to the present invention includes a semiconductor layer, a trench formed selectively in an obverse surface portion of the semiconductor layer and defining a unit cell of predetermined shape in the obverse surface portion, a second conductivity type layer formed to conform to a portion or an entirety of an inner surface of the trench, an obverse surface layer of a first conductivity type formed so as to be exposed from an obverse surface of the semiconductor layer in the unit cell, a reverse surface layer of the first conductivity type formed so as to be exposed from a reverse surface of the semiconductor layer, a drift layer of the first conductivity type formed between the obverse surface layer and the reverse surface layer of the semiconductor layer and being of lower concentration than the obverse surface layer and the reverse surface layer, a first electrode contacting the obverse surface layer and forming an ohmic contact with the obverse surface layer, and a second electrode contacting the reverse surface layer and forming an ohmic contact with the reverse surface layer. |
