发明名称 METHOD FOR SELECTIVELY DEPOSITING A LAYER ON A THREE DIMENSIONAL STRUCTURE
摘要 A method may include providing a substrate having a surface that defines a substrate plane and a substrate feature that extends from the substrate plane; directing an ion beam comprising angled ions to the substrate at a non-zero angle with respect to a perpendicular to the substrate plane, wherein a first portion of the substrate feature is exposed to the ion beam and wherein a second portion of the substrate feature is not exposed to the ion beam; directing molecules of a molecular species to the substrate wherein the molecules of the molecular species cover the substrate feature; and providing a second species to react with the molecular species, wherein selective growth of a layer comprising the molecular species and the second species takes place such that a first thickness of the layer grown on the first portion is different from a second thickness grown on the second portion.
申请公布号 US2016005607(A1) 申请公布日期 2016.01.07
申请号 US201414336893 申请日期 2014.07.21
申请人 Varian Semiconductor Equipment Associates, Inc. 发明人 Russell Simon;Omstead Thomas R.;Renau Anthony
分类号 H01L21/22;H01L21/225;H01L21/02 主分类号 H01L21/22
代理机构 代理人
主权项 1. A method, comprising: providing a substrate having a surface that defines a substrate plane and a substrate feature that extends from the substrate plane; directing an ion beam comprising angled ions to the substrate at a non-zero angle with respect to a perpendicular to the substrate plane, wherein a first portion of the substrate feature is exposed to the ion beam and wherein a second portion of the substrate feature is not exposed to the ion beam; directing molecules of a molecular species to the substrate wherein the molecules of the molecular species cover the substrate feature; and providing a second species to react with the molecular species, wherein selective growth of a layer comprising the molecular species and the second species takes place such that a first thickness of the layer grown on the first portion is different from a second thickness of the layer grown on the second portion.
地址 Gloucester MA US
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