发明名称 |
METHOD FOR SELECTIVELY DEPOSITING A LAYER ON A THREE DIMENSIONAL STRUCTURE |
摘要 |
A method may include providing a substrate having a surface that defines a substrate plane and a substrate feature that extends from the substrate plane; directing an ion beam comprising angled ions to the substrate at a non-zero angle with respect to a perpendicular to the substrate plane, wherein a first portion of the substrate feature is exposed to the ion beam and wherein a second portion of the substrate feature is not exposed to the ion beam; directing molecules of a molecular species to the substrate wherein the molecules of the molecular species cover the substrate feature; and providing a second species to react with the molecular species, wherein selective growth of a layer comprising the molecular species and the second species takes place such that a first thickness of the layer grown on the first portion is different from a second thickness grown on the second portion. |
申请公布号 |
US2016005607(A1) |
申请公布日期 |
2016.01.07 |
申请号 |
US201414336893 |
申请日期 |
2014.07.21 |
申请人 |
Varian Semiconductor Equipment Associates, Inc. |
发明人 |
Russell Simon;Omstead Thomas R.;Renau Anthony |
分类号 |
H01L21/22;H01L21/225;H01L21/02 |
主分类号 |
H01L21/22 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method, comprising:
providing a substrate having a surface that defines a substrate plane and a substrate feature that extends from the substrate plane; directing an ion beam comprising angled ions to the substrate at a non-zero angle with respect to a perpendicular to the substrate plane, wherein a first portion of the substrate feature is exposed to the ion beam and wherein a second portion of the substrate feature is not exposed to the ion beam; directing molecules of a molecular species to the substrate wherein the molecules of the molecular species cover the substrate feature; and providing a second species to react with the molecular species, wherein selective growth of a layer comprising the molecular species and the second species takes place such that a first thickness of the layer grown on the first portion is different from a second thickness of the layer grown on the second portion. |
地址 |
Gloucester MA US |