发明名称 TITANIUM TARGET FOR SPUTTERING AND MANUFACTURING METHOD THEREOF
摘要 A high-purity titanium target for sputtering having a purity of 5N5 (99.9995%) or higher, wherein the high-purity titanium target has no macro pattern on the target surface. An object of this invention is to provide a high-quality titanium target for sputtering, in which impurities causing particles and abnormal discharge phenomena are reduced, and which is free from fractures and cracks even during high-rate sputtering, and capable of stabilizing the sputtering characteristics, effectively inhibiting the generation of particles during deposition, and improving the uniformity of deposition.
申请公布号 US2016005576(A1) 申请公布日期 2016.01.07
申请号 US201414771519 申请日期 2014.03.03
申请人 JX NIPPON MINING & METALS CORPORATION 发明人 Tsukamoto Shiro
分类号 H01J37/34;C22F1/18;C22C14/00;C23C14/34 主分类号 H01J37/34
代理机构 代理人
主权项 1. A high-purity titanium target for sputtering having a purity of 5N5 (99.9995%) or higher, wherein the high-purity titanium target has no macro pattern on the target surface.
地址 Chiyoda-ku, Tokyo JP