发明名称 |
TITANIUM TARGET FOR SPUTTERING AND MANUFACTURING METHOD THEREOF |
摘要 |
A high-purity titanium target for sputtering having a purity of 5N5 (99.9995%) or higher, wherein the high-purity titanium target has no macro pattern on the target surface. An object of this invention is to provide a high-quality titanium target for sputtering, in which impurities causing particles and abnormal discharge phenomena are reduced, and which is free from fractures and cracks even during high-rate sputtering, and capable of stabilizing the sputtering characteristics, effectively inhibiting the generation of particles during deposition, and improving the uniformity of deposition. |
申请公布号 |
US2016005576(A1) |
申请公布日期 |
2016.01.07 |
申请号 |
US201414771519 |
申请日期 |
2014.03.03 |
申请人 |
JX NIPPON MINING & METALS CORPORATION |
发明人 |
Tsukamoto Shiro |
分类号 |
H01J37/34;C22F1/18;C22C14/00;C23C14/34 |
主分类号 |
H01J37/34 |
代理机构 |
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代理人 |
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主权项 |
1. A high-purity titanium target for sputtering having a purity of 5N5 (99.9995%) or higher, wherein the high-purity titanium target has no macro pattern on the target surface. |
地址 |
Chiyoda-ku, Tokyo JP |