| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an etching method including a step of removing at least a part of film by applying silicon etchant containing at least inorganic alkali compound, hydroxylamine compound and anionic compound to a polycrystalline silicon film or an amorphous silicon film. <P>SOLUTION: In forming irregularity on a semiconductor substrate by positively and efficiently removing an amorphous silicon film or a polycrystalline silicon film, silicon etchant for implementing well-balanced etching from the center to the end of a wafer and an etching method using the same are provided. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
