WORKPIECE PROCESSING METHOD

摘要

Disclosed is a method of processing a workpiece so as to form an opening that extends from an oxide region to a base layer through a portion between the raised regions. The method includes: (1) a step of forming an opening in the oxide region to expose a second section between the raised regions; and (2) a step of etching a residue made of silicon oxide and existing within the opening and a second section. In the second step, a denatured region is formed by exposing the workpiece to plasma of a mixed gas including a hydrogen-containing gas and NF 3 gas to denature the residue and the second section, and the denatured region is removed.