| 摘要 |
The present invention is to provide a method for evaluating gettering characteristics without contaminating a device wafer. The present invention relates to a method for evaluating a device wafer (11) which has a plurality of devices (19) formed on a surface (11a) and a gettering layer (23) formed therein. An electromagnetic wave (M1) and excited light (L) are simultaneously irradiated to the backside (11b) of the device wafer to generate excessive carriers. Based on an attenuation time of a reflected electromagnetic wave (M2), the gettering characteristics of the gettering layer formed on the device wafer is determined. |
