SEMICONDUCTOR DEVICE

摘要

The reliability of a semiconductor device is improved. A probe mark (PM) is formed on a probe region (PBR) of a pad (PD) covered with a protective insulating film (PIF). In addition, a pillar-shaped electrode (PE) has a first portion formed on an opening region (OP2), and a second portion which is extended over the probe region (PBR) from the opening region (OP2). A center position of the opening region (OP2) is deviated from a center position of the pillar-shaped electrode (PE) which faces a bonding finger.