| 摘要 |
An optoelectronic device comprising a semiconducting material, which semiconducting material comprises a halogenometallate compound comprising: (i) one or more monocations ([A]) or one or more dications ([B]); (ii) one or more metal or metalloid trications ([M]); and (iii) one or more halide anions ([X]). The invention also relates to a process for producing an optoelectronic device comprising a semiconducting material, which semiconducting material comprises a halogenometallate compound comprising: (a) one or more first monocations ([A]) or one or more first dications ([B]); (b) one or more metal or metalloid trications ([M]); and (c) one or more halide anions ([X]); which process comprises (a) disposing a second region on a first region, which second region comprises a layer of said semiconducting material. The invention also relates to a compound of formula (I) or (II): [A]a[M]z[X]a+3z (I); [B]b[M]z[X]2b+3z (II); wherein [A] is one or more organic monocations; [B] is one or more organic dications; [M] is one or more metal or metalloid trications selected from Bi3+, Al3+, Sb3+, In3+ and Ga3+; [X] is one or more halide anions; a is an integer from 1 to 6; b is an integer from 1 to 4; and z is an integer from 1 to 8. |
