发明名称 |
A VERTICAL HALL EFFECT ELEMENT WITH STRUCTURES TO IMPROVE SENSITIVITY |
摘要 |
A vertical Hall Effect element includes one or more of: a low voltage P-well region disposed at a position between pickups of the vertical Hall Effect element, Light-N regions disposed under the pickups, a pre-epi implant region, or two epi regions to result in an improved sensitivity of the vertical Hall Effect element. A method results in the vertical Hall Effect element having the improved sensitivity. |
申请公布号 |
EP2962336(A1) |
申请公布日期 |
2016.01.06 |
申请号 |
EP20140702402 |
申请日期 |
2014.01.16 |
申请人 |
ALLEGRO MICROSYSTEMS, LLC |
发明人 |
WANG, YIGONG;COOPER, RICHARD, B. |
分类号 |
H01L43/06;G01R33/07 |
主分类号 |
H01L43/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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