发明名称 |
COMPOSITION AND PROCESS FOR POST-ETCH REMOVAL OF PHOTORESIST AND/OR SACRIFICIAL ANTI-REFLECTIVE MATERIAL DEPOSITED ON A SUBSTRATE |
摘要 |
<p>A composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) materials from a substrate having such material(s) thereon. The composition includes a base component, such as a quaternary ammonium base in combination with an alkali or alkaline earth base, or alternatively a strong base in combination with an oxidant. The composition may be utilized in aqueous medium, e.g., with chelator, surfactant, and/or co-solvent species, to achieve high-efficiency removal of photoresist and/or SARC materials in the manufacture of integrated circuitry, without adverse effect on metal species on the substrate, such as copper, aluminum and/or cobalt alloys, and without damage to SiOC-based dielectric materials employed in the semiconductor architecture.</p> |
申请公布号 |
EP1730600(B1) |
申请公布日期 |
2016.01.06 |
申请号 |
EP20050724288 |
申请日期 |
2005.03.02 |
申请人 |
ENTEGRIS INC. |
发明人 |
RATH, MELISSA, K.;BERNHARD, DAVID, D.;MINSEK, DAVID;KORZENSKI, MICHAEL, B.;BAUM, THOMAS, H. |
分类号 |
G03F7/32;A61K31/44;C11D1/62;C11D3/04;C11D3/30;C11D3/39;C11D7/06;C11D11/00;G03F7/42 |
主分类号 |
G03F7/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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