发明名称 シリコンウェハーのブレイクパターン、シリコンウェハー、および、シリコン基板
摘要 <p>A break pattern of a silicon wafer includes a line to be cut which is set in the silicon wafer assuming a surface as a (110) face in a surface direction of a first (111) face perpendicular to the (110) face; and through holes which are provided in a plurality of rows on the line to be cut, wherein each of the through holes has a first (111) face, a second (111) face which intersects the first (111) face, and a third (111) face which intersects the second (111) face and the first (111) face, an intersecting point with end edges of the second (111) face and the third (111) face is assumed as a point closest to the adjacent through holes.</p>
申请公布号 JP5838648(B2) 申请公布日期 2016.01.06
申请号 JP20110176522 申请日期 2011.08.12
申请人 セイコーエプソン株式会社 发明人 富樫 勇
分类号 H01L21/301;B41J2/16 主分类号 H01L21/301
代理机构 代理人
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