A P-N JUNCTION OPTOELECTRONIC DEVICE FOR IONIZING DOPANTS BY FIELD EFFECT

摘要

The present invention relates to a photoelectric element (100) including a mesa structure (124). The mesa structure (124) comprises: a first semiconductor part (106) and a second semiconductor part (108) which form a P-N junction; and a first electrode (112) electrically connected to the first semiconductor part which is arranged between the second semiconductor part and the first electrode. The photoelectric element comprises: a second electrode (116) electrically connected to the second semiconductor part; and elements (118,120) which can ionize dopants of the first semiconductor part and/or the second semiconductor part through generating an electric field in the first semiconductor part and/or the second semiconductor part, and can be overlaid on a side of at least one part among the first semiconductor part and/or the second semiconductor part and at least one part of the sides of at least one part of a space charge area formed by the first semiconductor part and the second semiconductor part. An upper side of the first electrode and an upper side of the second electrode form a surface (122) which is actually flat and continuous.