| 摘要 |
The present invention relates to a method and a structure for enhancing channel performance in a vertical gate all-around device, which provides a device comprising: a source region (140); a drain region (190) substantially vertically aligned in the source region; a channel structure (160) bridging between the source region and the drain region, and substantially defining a vertical channel direction; and a gate structure (170) vertically arranged between the source region and the drain region, and surrounding the channel structure. The channel structure includes: a plurality of channels (161) substantially vertically extended alongside each other to bridge the source region and the drain region respectively; and at least one stressor (240) interposed between each pair of adjacent channels, and substantially extended along the vertical channel direction. The stressor causes a lateral deformation on the adjacent channels, thereby deforming the channels in the vertical channel direction. |
