SURFACE MODIFICATION OF IMPLANT DEVICES

摘要

Provided according to embodiments of the invention are methods of manufacturing implant devices. In methods described herein, implant devices are exposed to a reactive gas that includes a reactive species, and optionally, an inert gas, at elevated temperatures, for a duration sufficient to generate a high density of nanoscale structures on the exposed surface of the device. Also provided are implant devices formed by methods described herein.