发明名称 ENHANCED ADDRESSABILITY FOR SERIAL NON-VOLATILE MEMORY
摘要 <p>A method and a memory device are provided for accessing a storage location. The method includes storing an extended address value in a register in a non-volatile memory device. The method further includes subsequently receiving multiple addresses and combining the stored extended address value with each of the multiple received addresses to produce multiple combined addresses. The method further includes accessing multiple storage locations within the non-volatile memory device based, at least in part, on the multiple combined addresses.</p>
申请公布号 EP2382637(B1) 申请公布日期 2016.01.06
申请号 EP20080879280 申请日期 2008.12.30
申请人 MICRON TECHNOLOGY, INC. 发明人 KALE, POORNA;BUEB, CHRIS;ZERILLI, TOMMASO;BUFANO, RAFFAELE;LOSPALLUTI, SANDRA;GIBILARO, MARCO
分类号 G11C16/08;G11C8/12;G11C16/10;G11C16/26 主分类号 G11C16/08
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