发明名称 |
FINE RESIST PATTERN-FORMING COMPOSITION AND PATTERN FORMING METHOD USING SAME |
摘要 |
<p>The present invention provides a composition enabling to form a fine negative photoresist pattern free from troubles such as surface roughness, bridge defects or unresolved defects, and the invention also provides a pattern formation method employing that composition. The composition is used for miniaturizing a resist pattern by applying to a negative resist pattern from a chemically amplified resist composition and fattening the resist pattern. This composition comprises a polymer comprising a repeating unit having an amino group or a polymer mixture, and a solvent, and further comprises a specific amount of an acid or indicates a specific pH value. The polymer mixture comprises polymers whose HSP distance, determined from Hansen solubility parameter, is 3 or more. In the pattern formation method, the composition is cast on a negative photoresist pattern beforehand obtained by development with an organic solvent developer and is then heated to form a fine pattern.</p> |
申请公布号 |
EP2963499(A1) |
申请公布日期 |
2016.01.06 |
申请号 |
EP20140756352 |
申请日期 |
2014.02.26 |
申请人 |
AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.À.R.L. |
发明人 |
YAMAMOTO, KAZUMA;MIYAMOTO, YOSHIHIRO;SEKITO, TAKASHI;NAGAHARA, TATSURO |
分类号 |
G03F7/40;G03F7/038;G03F7/32;H01L21/027 |
主分类号 |
G03F7/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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