发明名称 Surface acoustic wave apparatus and manufacturing method therefor
摘要 <p>A manufacturing method for a SAW apparatus is disclosed. A first insulating layer (2) is formed on the entire surface of a piezoelectric LiTaO3 substrate (1). By using a resist pattern (3) used for forming an IDT electrode, the first insulating layer (2) in which the IDT electrode is to be formed is removed. An electrode film (4) made of a metal having a density higher than Al, or of an alloy primarily including such a metal, is disposed in the area in which the first insulating layer is removed so as to form the IDT electrode. The resist pattern (3) remaining on the first insulating layer (2) is removed. A second insulating layer (6) is formed to cover the first insulating layer (20) and the IDT electrode. <IMAGE> <IMAGE> <IMAGE> <IMAGE> <IMAGE> <IMAGE> <IMAGE></p>
申请公布号 EP2288025(B1) 申请公布日期 2016.01.06
申请号 EP20100178784 申请日期 2003.05.30
申请人 MURATA MANUFACTURING CO., LTD. 发明人 NISHIYAMA, KENJI;NAKAO, TAKESHI;KADOTA, MICHIO
分类号 H03H3/10;H03H3/08;H03H9/02;H03H9/145;H03H9/25;H03H9/64 主分类号 H03H3/10
代理机构 代理人
主权项
地址