Verfahren zum Herstellen eines Halbleiterelements mit einer gelochten Isolierschicht ueber einer eingelassenen Zone

摘要

998,388. Semi-conductor devices. PLESSEY CO. Ltd. June 18, 1963 [June 29, 1962], No. 25145/62. Heading H1K. A device formed by diffusing impurity through a mask into a semi-conductor wafer to form a PN junction comprises an insulating layer through which part of the diffused region is exposed. Contact is made to the exposed region via a metal layer extended over it and over the insulating layer surrounding it at least as far as the boundary of the diffused region. The diode shown is formed by diffusing phosphorus through silicon oxide mask 11 into a prepared P-type silicon wafer to form the PN junction. After evaporating on contact 14, a layer of aluminium 4000 Š thick is deposited to form the circular electrode 16 which is keyed to the oxide by subsequently heating at 600‹ C. for 2 to 3 minutes. The field established between the periphery of the electrode and the body with the junction reverse biased eliminates the adverse effects of surface states created by the oxide layer on the reverse breakdown voltage of the device.