发明名称 |
Lead-free glass for semiconductor encapsulation |
摘要 |
The technical task of the present invention is to provide a lead-free glass for semiconductor encapsulation, which is easy to automate an appearance inspection, and furthermore, has excellent refinability and encapsulatability of semiconductor devices. In the lead-free glass for semiconductor encapsulation according to the present invention, a temperature at which the viscosity of glass is 106 dPa·s is 670° C. or lower, and, as a glass composition, the content of CeO2 is from 0.01 to 6% by mass, and the content of Sb2O3 is 0.1% by mass or less. |
申请公布号 |
US9230872(B2) |
申请公布日期 |
2016.01.05 |
申请号 |
US201113805039 |
申请日期 |
2011.06.17 |
申请人 |
NIPPON ELECTRIC GLASS CO., LTD. |
发明人 |
Hashimoto Koichi |
分类号 |
H01L23/29;C03C8/02;C03C3/068;C03C3/095;C03C8/24;H01L33/56 |
主分类号 |
H01L23/29 |
代理机构 |
Drinker Biddle & Reath LLP |
代理人 |
Drinker Biddle & Reath LLP |
主权项 |
1. A lead-free glass for semiconductor encapsulation, wherein a temperature at which the viscosity of glass is 106 dPa·s is 670° C. or lower, and, as a glass composition, the content of CeO2 is from 0.01 to 4% by mass, the content of Sb2O3 is 0.1% by mass or less, the content of SiO2 is from 20 to 65% by mass, the content of Bi2O3 is 0 to 20% by mass, the content of B2O3 is from 14 to 40% by mass, and the glass further comprises a total content of R2O from 14.7 to 22% by mass, wherein R2O is Li2O, Na2O, and K2O. |
地址 |
Otsu-shi, Shiga JP |