发明名称 |
Non-volatile memory with negative bias |
摘要 |
A memory system with improved power consumption and operation speed. A memory system performs a data read operation in a low power read mode to improve operation speed and reduce power consumption by biasing bit cells in the memory system at a negative voltage. The use of the negative voltage minimizes changing of voltages of the bit cells. Additionally, the memory system performs data read operation in a margin read mode to improve accuracy of the reading by biasing the bit cells at a positive voltage. |
申请公布号 |
US9230674(B1) |
申请公布日期 |
2016.01.05 |
申请号 |
US201414521210 |
申请日期 |
2014.10.22 |
申请人 |
Synopsys, Inc. |
发明人 |
Wong Yanyi Liu;Sutandi Agustinus |
分类号 |
G11C16/04;G11C16/26;G11C16/24;G11C16/10;G11C16/12;G11C16/30;G11C16/08;G11C7/18 |
主分类号 |
G11C16/04 |
代理机构 |
Fenwick & West LLP |
代理人 |
Fenwick & West LLP |
主权项 |
1. A non-volatile memory system, comprising:
a plurality of bit cells structured in a row with a control line, a word line, and a plurality of bit lines, each bit line associated with a corresponding bit cell from the plurality of bit cells, the control line configured to:
couple the word line and a selected bit line from the plurality of bit lines to read a content in a bit cell associated with the selected bit line responsive to the control line supplied with a first voltage, anddecouple the word line and the plurality of bit lines to not read contents in the plurality of bit cells responsive to the control line supplied with a second voltage; and a bit line controller coupled to the plurality of bit lines and to bias the selected bit line from the plurality of bit lines at a third voltage that is lower than the second voltage to read the content in the bit cell associated with the selected bit line in a first mode. |
地址 |
Mountain View CA US |