Self-aligned double patterning

摘要

A system and method for a semiconductor device are provided. An embodiment comprises a dielectric layer and masking layers over the dielectric layer. A thin spacer layer is used to form spacers alongside a pattern. A reverse image of the spacer pattern is formed and an enlargement process is used to slightly widen the pattern. The widened pattern is subsequently used to pattern an underlying layer. This process may be used to form a pattern in a dielectric layer, which openings may then be filled with a conductive material.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming a first patterned layer over a substrate; forming a first mask over the substrate and between adjacent elements of the first patterned layer; removing the first patterned layer, thereby forming first openings in the first mask to expose an underlying layer; performing an enlargement process to widen the first openings in the first mask, thereby creating an enlarged pattern; and transferring, after the performing the enlargement process, the enlarged pattern to the underlying layer, thereby forming second openings in the underlying layer.