Ion irradiation apparatus and ion irradiation method

摘要

An ion irradiation apparatus is provided. The ion irradiation apparatus includes a support member, a measuring device, and a control device. The support member is larger than the substrate. The measuring device is disposed forwardly in a traveling direction of an ion beam. The ion irradiation apparatus operates in a first mode during which the measuring device is irradiated with a remaining part of the ion beam after being partially shielded by the support member, when the substrate is not irradiated with the ion beam after crossing the ion beam; and a second mode during which the measuring device is irradiated with the ion beam without being shielded by the support member, when the substrate is not irradiated with the ion beam after crossing the ion beam. The control device controls the substrate so that the ion treatment process is performed in the first mode at least one time during the treatment.

主权项

1. An ion irradiation apparatus comprising:
a support member having an outside dimension greater than an outside dimension of a substrate in a conveyance direction of the substrate, the support member being configured to be conveyed together with the substrate while supporting the substrate by an inward region of the support member in the conveyance direction; and a measuring device disposed forwardly in a traveling direction of an ion beam with respect to a position where the substrate is conveyed within a treatment chamber, the measuring device being configured to be irradiated with at least a part of the ion beam, when the substrate is at a position in which the substrate is not irradiated with the ion beam, wherein the ion irradiation apparatus is configured to perform an ion irradiation treatment process of conveying the substrate within the treatment chamber in a direction intersecting the ion beam traveling direction so that the substrate is irradiated with the ion beam, a plurality of times, to complete an ion irradiation treatment for the substrate, wherein the ion irradiation treatment process comprises:
a first ion irradiation treatment mode during which the measuring device is irradiated with a remaining part of the ion beam after being partially shielded by the support member, when the substrate is disposed at the position in which the substrate is not irradiated with the ion beam after crossing the ion beam; anda second ion irradiation treatment mode during which the measuring device is irradiated with the ion beam without being shielded by the support member, when the substrate is disposed at the position in which the substrate is not irradiated with the ion beam after crossing the ion beam, and wherein the ion irradiation apparatus further comprises a control device configured to control the conveyance of the substrate in such a manner that the ion irradiation treatment process is performed in the first ion irradiation treatment mode at least one time during a period until the ion irradiation treatment for the substrate is completed.