Semiconductor memory device and method for driving the same

摘要

In a conventional DRAM, data read errors are more likely to occur along with miniaturization of DRAM A small change in the potential of a first bit line is inverted by a first inverter constituted by an n-channel transistor and a p-channel transistor, and is output to a second bit line through a first selection transistor, which is a first switch. Since the potential of the second bit line is the inverse of the potential of the first bit line, the potential difference between the first bit line and the second bit line is increased. The increased potential difference is amplified by a known sense amplifier, a flip-flop circuit composed of the first inverter and a second inverter (constituted by an n-channel transistor and a p-channel transistor), or the like.

主权项

1. A semiconductor memory device comprising:
a first bit line; a second bit line; a memory cell connected to one of the first bit line and the second bit line; a first inverter; a first switch; a second inverter; and a second switch, wherein the first inverter is connected to the first switch, wherein the second inverter is connected to the second switch, wherein the first bit line is connected to the first inverter, wherein the second bit line is connected to the first switch, wherein the first bit line is connected to the second switch, wherein the second bit line is connected to the second inverter, wherein the semiconductor device is configured to take a state that the first switch is on and the second switch is off, and wherein the semiconductor device is configured that, after the first switch is turned on, the second switch is turned on so that a loop of the first inverter, the first switch, the second inverter, and the second switch is formed.