发明名称 |
High voltage circuit layout structure |
摘要 |
A high voltage circuit layout structure has a P-type substrate; a first N-type tub, a second N-type tub, a third N-type tub, a first P-type tub with a first width and a second P-type tub with a second width formed on the P-type substrate; wherein the first P-type tub is formed between the first N-type tub and the second N-type tub; and the second P-type tub is formed between the second N-type tub and the third N-type tub. |
申请公布号 |
US9231121(B2) |
申请公布日期 |
2016.01.05 |
申请号 |
US201313744273 |
申请日期 |
2013.01.17 |
申请人 |
Monolithic Power Systems, Inc. |
发明人 |
Urienza Joseph |
分类号 |
H01L21/761;H01L29/872 |
主分类号 |
H01L21/761 |
代理机构 |
Perkins Coie LLP |
代理人 |
Perkins Coie LLP |
主权项 |
1. A high voltage circuit layout structure, comprising:
a P-type substrate; a first N-type tub, a second N-type tub, and a third N-type tub formed on the P-type substrate, wherein the first N-type tub's potential and the third N-type tub's potential follow relatively with the second N-type tub's potential; a first P-type tub having a first width formed on the P-type substrate and formed between the first N-type tub and the second N-type tub, the first width being dependent on the punch-through voltage requirement between the first N-type tub and the second N-type tub; a second P-type tub having a second width formed on the P-type substrate and formed between the second N-type tub and the third N-type tub, the second width being dependent on the punch-through voltage requirement between the second N-type tub and the third N-type tub; and a metal layer contacted with the first N-type tub and the second N-type tub to form a first Schottky diode and a second Schottky diode, and the said metal layer also contacted with the first P-type tub; wherein the first N-type tub and the second N-type tub respectively has P-plus regions in their surfaces. |
地址 |
San Jose CA US |