发明名称 |
Process for producing graphene/SiC composite material and graphene/SiC composite material obtained thereby |
摘要 |
A process for advantageously producing a graphene/SiC composite material is provided in which a large-area graphene layer that is flat in an atomic level is formed on a SiC single crystal substrate. The process for producing a graphene/SiC composite material in which at least one graphene layer is formed on a SiC single crystal substrate, comprising the steps of: removing an oxide film that is formed by natural oxidation and covers a surface of the SIC single crystal substrate, thereby exposing a Si surface of the SiC single crystal substrate, heating the SiC single crystal substrate with the Si surface exposed under an oxygen atmosphere, thereby forming a SiO2 layer on the surface of the SiC single crystal substrate, and heating the SiC single crystal substrate under vacuum on which the SiO2 layer was formed. |
申请公布号 |
US9227848(B2) |
申请公布日期 |
2016.01.05 |
申请号 |
US201213354628 |
申请日期 |
2012.01.20 |
申请人 |
National University Corporation Nagoya University |
发明人 |
Kusunoki Michiko;Norimatsu Wataru |
分类号 |
C30B1/02;C01B31/04;B82Y30/00;B82Y40/00;C30B29/02;C30B29/36;C30B33/00 |
主分类号 |
C30B1/02 |
代理机构 |
Burr & Brown, PLLC |
代理人 |
Burr & Brown, PLLC |
主权项 |
1. A process for producing a graphene/SiC composite material in which at least one graphene layer is formed on a SiC single crystal substrate, comprising the steps of:
removing an oxide film that is formed by natural oxidation and covers a surface of the SiC single crystal substrate, thereby exposing a Si surface of the SiC single crystal substrate, heating the SiC single crystal substrate with the Si surface exposed under an oxygen atmosphere, thereby forming a SiO2 layer on the surface of the SiC single crystal substrate, and heating under vacuum the SiC single crystal substrate on which the SiO2 layer was formed. |
地址 |
Nagoya-Shi JP |