发明名称 Electro-optical device and electronic apparatus
摘要 An electro-optical device includes a first light shielding film; a transistor element formed on the first light shielding film to overlap the first light shielding film; a second light shielding film formed on the transistor element to overlap the transistor element and electrically connected to an input terminal of the transistor element; a transparent conductive film extended toward an upper layer side of the second light shielding film in an opening region, through which light penetrates, of the display region; a dielectric film formed on the transparent conductive film in the opening region; and a transparent pixel electrode formed on the dielectric film in the opening region, constituting a storage capacitor together with the transparent conductive film and the dielectric film, and having a transparent pixel electrode which is electrically connected to the transistor element.
申请公布号 US9231109(B2) 申请公布日期 2016.01.05
申请号 US201012652277 申请日期 2010.01.05
申请人 SEIKO EPSON CORPORATION 发明人 Iki Takunori
分类号 H01L29/205;H01L29/786;H01L27/12 主分类号 H01L29/205
代理机构 Maschoff Brennan 代理人 Maschoff Brennan
主权项 1. An electro-optical device comprising: a substrate having a plurality of pixels each of which has an opening region, the opening region being a region through which light penetrates; a transistor element formed above the substrate having an input terminal and an output terminal; a light shielding film formed above the transistor element to overlap the transistor element; a first relay layer of an island shape formed on the same layer as the light shielding film; a transparent conductive film formed above the light shielding film and formed at least in the opening region and having a first aperture portion which is formed between two adjacent pixels of the plurality of pixels; a second relay layer of an island shape formed on the same layer as the transparent conductive film being placed inside the first aperture portion when seen in a plan view; a dielectric film formed above the transparent conductive film in the opening region; a transparent pixel electrode formed above the dielectric film in the opening region; a third relay layer provided on a layer between the transistor element and the first relay layer being electrically connected to the output terminal of the transistor element and the first relay layer, wherein, the transistor element includes a semiconductor layer,the semiconductor layer is extended along a first direction,the light shielding film is electrically connected to the input terminal of the transistor element,the first relay layer is electrically connected to the output terminal of the transistor element and the second relay layer,the second relay layer is electrically connected to the first relay layer and the transparent pixel electrode,the transparent pixel electrode constitutes a storage capacitor together with the transparent conductive film and the dielectric film,the second relay layer has a transparent connection portion which is extended along a thickness direction of the substrate in the first aperture portion, and which is electrically connected to the output terminal of the transistor element and the transparent pixel electrode,the second relay layer is transparent,the second relay layer and the transparent pixel electrode are connected in the opening region,the third relay layer has a body portion extending in a second direction intersecting the first direction, and a protrusion portion protruding from the body portion in the first direction, and wherein the third relay layer is disposed to overlap a portion of a channel portion of the transistor element and output terminal of the transistor element,the third relay layer has a light shielding connection portion which is extended along a thickness direction of the substrate and which is electrically connected to the output terminal of the transistor element, andthe light shielding connection portion is disposed above the output terminal of the transistor element.
地址 Tokyo JP