| 发明名称 | Metal gate structure and method | ||
| 摘要 | A method comprises forming a gate trench between a plurality of gate spacers over a substrate, forming a resistor trench over the substrate, depositing a first layer on a bottom of the gate trench, a bottom of the resistor trench, sidewalls of the gate trench and sidewalls of the resistor trench, depositing a second layer over the first layer, depositing a gate electrode layer over the second layer and applying a chemical mechanical polish process to the gate electrode layer until the gate electrode layer is removed from the resistor trench. | ||
| 申请公布号 | US9231069(B2) | 申请公布日期 | 2016.01.05 |
| 申请号 | US201514747902 | 申请日期 | 2015.06.23 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Yen Hsiu-Jung;Wang Jen-Pan |
| 分类号 | H01L21/336;H01L29/49;H01L29/66;H01L21/3213;H01L21/306;H01L21/31;H01L21/3205;H01L21/321;H01L49/02;H01L21/768;H01L21/8234 | 主分类号 | H01L21/336 |
| 代理机构 | Slater & Matsil, L.L.P. | 代理人 | Slater & Matsil, L.L.P. |
| 主权项 | 1. A method comprising: removing a dummy gate electrode layer to form a gate trench between a plurality of gate spacers over a substrate; forming a resistor trench over the substrate, wherein a bottom of the resistor trench is higher than a bottom of the gate trench; depositing a barrier layer on a bottom of the gate trench and a bottom of the resistor trench; depositing a first film on the bottom of the gate trench, the bottom of the resistor trench, sidewalls of the gate trench and sidewalls of the resistor trench; depositing a second film over the first film; depositing a gate electrode layer over the second film; and applying a chemical mechanical polish process to the gate electrode layer until the gate electrode layer is removed from the resistor trench. | ||
| 地址 | Hsin-Chu TW | ||