Semiconductor device and fabricating method thereof

摘要

A semiconductor device and a method of fabricating the semiconductor device are provided. The semiconductor device includes a substrate, a gate structure over the substrate, a source/drain regions adjacent to the pair of spacers in the substrate, an etch stop layer next to the gate structure and overlying the substrate, a contact plug extending into the source/drain region and partially overlapping the gate structure, a protective layer over the etch stop layer overlying the substrate and covering the etch stop layer next to the gate structure without the contact plug, and an interlayer dielectric layer over the protective layer. The contact plug has no contact-to-gate short issue to the gate structure.

主权项

1. A semiconductor device, comprising:
a substrate; a gate structure over the substrate comprising: a gate dielectric layer over the substrate; a gate electrode over the gate dielectric layer; an isolation layer over the gate electrode; and a spacer next to each of the two sides of the gate electrode; a source/drain regions adjacent to the pair of spacers in the substrate; an etch stop layer next to the pair of spacers and overlying the substrate; a contact plug extending into the source/drain region and partially overlapping the gate structure through the spacer; a protective layer over the etch stop layer overlying the substrate and covering the etch stop layer next to the spacer without the contact plug; and an interlayer dielectric layer over the protective layer.