Light emitting diodes having zinc oxide fibers over silicon substrates

摘要

Semiconductor devices useful as light emitting diodes or power transistors are provided. The devices produced by depositing a Zn—O-based layer comprising nanostructures on a Si-based substrate, with or without a metal catalyst layer deposited therebetween. Furthermore, a pair of adjacent p-n junction forming layers is deposited on the ZnO-based layer, where one of the pair is an n-type epitaxial layer, and the other is a p-type epitaxial layer. One or more epitaxial layers may, optionally, be deposited between the ZnO-based layer and the pair of adjacent p-n junction forming layers.

主权项

1. A semiconductor device comprising:
a Si-based substrate comprising a planar substrate upper surface; a ZnO-based layer comprising nanostructures overlaying said Si-based substrate, the ZnO-based layer comprising a planar ZnO-based layer upper surface that extends parallel to the substrate upper surface; a pair of adjacent p-n junction forming layers overlaying said ZnO-based layer, wherein one of said pair is an n-type epitaxial layer, and the other is a p-type epitaxial layer, wherein a lower layer of said pair has a planar p-n layer lower surface that extends parallel to the ZnO-based layer upper surface; and a top electrode layer overlaying said pair of adjacent p-n junction forming layers.