Method for growing III-V epitaxial layers

摘要

Disclosed are methods of growing III-V epitaxial layers on a substrate, semiconductor structures thus obtained, and devices comprising such semiconductor structures. An example semiconductor substrate includes a substrate and a buffer layer on top of the substrate, where a conductive path is present between the substrate and buffer layer. A conductive path may be present in the conductive interface, and the conductive path may be interrupted by one or more local electrical isolations. The local electrical isolation(s) may be positioned with the device such that at least one of the local electrical isolation(s) is located between a high voltage terminal and a low voltage terminal of the device.

主权项

1. A method of manufacturing a device comprising a semiconductor structure, wherein the method comprises:
providing a substrate; providing an epitaxial semiconducting buffer layer on top of the substrate, thereby obtaining a conductive interface between the buffer layer and the substrate; forming one or more protective layers over the buffer layer; forming, after forming the one or more protective layers, one or more local electrical isolations at the conductive interface and partly in the substrate, thereby interrupting electric current at the conductive interface, wherein the one or more local electrical isolations define a surface, wherein the one or more local electrical isolations are positioned such that at least one of the one or more local electrical isolations is located between a high voltage terminal and a low voltage terminal of the device; planarizing the surface of the one or more local electrical isolations; and removing, after planarizing the surface, the one or more protective layers prior to a re-growth process.