Wafer processing chamber, heat treatment apparatus and method for processing wafers

摘要

A wafer processing chamber is provided, including a first processing gas supply unit and a second processing gas supply unit. The first processing gas supply unit is configured for supplying a first processing gas to form a first processing zone in the wafer processing chamber. The second processing gas supply unit is configured for supplying a second processing gas into the wafer processing chamber to form a second processing zone in the wafer processing chamber. In the wafer processing chamber, the first processing zone and the second processing zone are virtually separated from each other, such that a process wafer in the first processing zone may be performed a different process from another process wafer in the second processing zone at the same time. Further, a heat treatment apparatus and a method for processing wafers also provide herein.

主权项

1. A wafer processing chamber, comprising:
a first processing gas supply unit configured for supplying a first processing gas to form a first processing zone; and a second processing gas supply unit configured for supplying a second processing gas to form a second processing zone, wherein the first processing zone and the second processing zone are virtually separated from each other.