Convex shaped thin-film transistor device having elongated channel over insulating layer

摘要

The present invention provides a semiconductor device that has a shorter distance between the bit lines and easily achieves higher storage capacity and density. The semiconductor device includes: first bit lines formed on a substrate; an insulating layer that is provided between the first bit lines and in a groove in the substrate, and has a higher upper face than the first bit lines; channel layers that are provided on both side faces of the insulating layer, and are coupled to the respective first bit lines; and charge storage layers that are provided on the opposite side faces of the channel layers from the side faces on which the insulating layers are formed.

主权项

1. A semiconductor device comprising:
a substrate, the substrate comprising a groove; a plurality of first bit lines comprising a plurality of upper faces, the plurality of first bit lines provided on the substrate; an insulating layer that is provided between the plurality of first bit lines on the substrate, the insulating layer comprising opposing side faces, wherein an upper face of the insulating layer is higher than a plurality of upper faces of the plurality of first bit lines; and an ONO film comprising a top oxide film, a tunnel oxide film, and a plurality of charge storage layers, the top oxide film and the tunnel oxide film each comprising top, bottom and side surfaces, wherein at least a portion of the bottom surface of the top oxide film is in direct contact with the top surface of the tunnel oxide film, further wherein a path of a current flowing through the substrate and between the plurality of first bit lines is lengthened by the portion of the insulating layer provided in the groove of the substrate.