发明名称 Thin film transistor array and EL display employing thereof
摘要 EL display has a luminescence unit having a luminescence layer being disposed between a pair of electrodes and a thin film transistor array unit controlling luminescence of the luminescence unit. An interlayer insulation film is disposed between the luminescence unit and the transistor array unit. An anode of the luminescence unit is connected electrically to the thin film transistor array via a contact hole of the interlayer insulation film. The thin film transistor array further has a current supplying relaying electrode that is connected to the anode of the luminescence unit via the contact hole of the interlayer insulation film. A diffusion prevention film is formed on the boundary face of the anode of the luminescence unit and the relaying electrode.
申请公布号 US9231038(B2) 申请公布日期 2016.01.05
申请号 US201414284219 申请日期 2014.05.21
申请人 JOLED INC 发明人 Shinokawa Yasuharu;Ito Ken
分类号 H01L27/32;H01L27/12 主分类号 H01L27/32
代理机构 McDermott Will & Emery LLP 代理人 McDermott Will & Emery LLP
主权项 1. An EL display comprising: a luminescence unit having a luminescence layer disposed between a pair of electrodes; a thin film transistor array unit controlling luminescence of the luminescence unit; an interlayer insulation film disposed between the luminescence unit and the transistor array unit; and a current supplying electrode connected electrically to an electrode of the luminescence unit and for connecting the electrode of the luminescence unit to the thin film transistor array unit via a contact hole of the interlayer insulation film, wherein a diffusion prevention film is formed on a boundary face between the electrode of the luminescence unit and the current supplying electrode, and the diffusion prevention film is made of an oxide having a main component same as material constituting the electrode of the luminescence unit, and the diffusion prevention film has a material composition of AlxCuyOz where x>y≧0, and z>0.
地址 Tokyo JP