Nonvolatile semiconductor memory device

摘要

A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a block insulating layer; an organic molecular layer, which is formed between the semiconductor layer and the block insulating layer, and contains first organic molecules and second organic molecules, and in which the first organic molecule has a first alkyl chain or a first alkyl halide chain on the semiconductor layer side and a charge trapping unit on the block insulating layer side, and the second organic molecule has a second alkyl chain or a second alkyl halide chain on the semiconductor layer side and a hydroxy group, an ether group, a carboxyl group or an ester group on the block insulating layer side; and a control gate electrode formed on the block insulating layer.

主权项

1. A nonvolatile semiconductor memory device, comprising:
a stacked structure having insulating layers and control gate electrode layers, the insulating layers and the control gate electrode layers being alternately stacked; a block insulating layer provided on the side surface of a hole penetrating the stacked structure from its top surface to the lowermost control gate electrode layer with respect to a stacking direction of the stacked structure; an organic molecular layer formed on the inner surface of the block insulating layer, the organic molecular layer including first organic molecules and second organic molecules, the first organic molecules and the second organic molecules co-existing in the organic molecular layer, the first organic molecules having a first alkyl chain or a first alkyl halide chain and a charge trapping unit, and the second organic molecules having a second alkyl chain or a second alkyl halide chain and a hydroxy group, an ether group, a carboxyl group or an ester group; a tunnel insulating layer provided on the inner surface of the organic molecular layer; and a semiconductor layer provided on the inner surface of the tunnel insulating layer.