发明名称 |
Interconnect structure and forming method thereof |
摘要 |
An interconnect structure and a forming method thereof are provided. The method includes: providing a semiconductor substrate which has semiconductor devices formed therein; forming a conductive layer on the semiconductor substrate; forming a mask layer on the conductive layer; forming a groove in the mask layer and the conductive layer, the groove having a depth-to-width ratio greater than 0.8; and depositing an intermetallic dielectric layer to cover the mask layer and fill the groove, wherein an air gap is formed in a portion of the intermetallic dielectric layer in the groove. The mask layer is formed on the conductive layer, so that the depth-to-width ratio of the groove between adjacent interconnects is increased. Besides, the air gap with a relatively large size is formed between two adjacent interconnects. Therefore, a dielectric constant and parasitic capacitance between adjacent interconnects are reduced evidently, and the performance of the semiconductor devices is improved. |
申请公布号 |
US9230855(B2) |
申请公布日期 |
2016.01.05 |
申请号 |
US201314108860 |
申请日期 |
2013.12.17 |
申请人 |
Shanghai Huahong Grace Semiconductor Manufacturing Corporation |
发明人 |
Li Ernest |
分类号 |
H01L21/4763;H01L21/768;H01L23/522;H01L23/532 |
主分类号 |
H01L21/4763 |
代理机构 |
Harness, Dickey & Pierce, P.L.C. |
代理人 |
Harness, Dickey & Pierce, P.L.C. |
主权项 |
1. A method for forming an interconnect structure, comprising:
providing a semiconductor substrate that has semiconductor devices formed therein; forming a conductive layer on the semiconductor substrate; forming a mask layer on the conductive layer; forming a groove in the mask layer and the conductive layer, the groove having a depth-to-width ratio greater than 0.8, wherein a depth of the groove is a sum of a depth of the mask layer and a depth of the conductive layer; and depositing an intermetallic dielectric layer to cover the mask layer and fill the groove, wherein an air gap is formed in a portion of the intermetallic dielectric layer in the groove. |
地址 |
Pudong, Shanghai CN |