| 摘要 |
The present invention is capable of suppressing an electrode, forming a capacitor, from being eluted from the bottom of a connection hole. A capacitor CP includes a first electrode EL1 and a second electrode EL2. The first electrode EL1 is electrically connected with a transistor TR1. The second electrode EL2 is separated from the first electrode EL1. Moreover, the second electrode EL2 is covered by an interlayer insulation film ILD3. Multiple connection holes CH are formed on the interlayer insulation film ILD3. The connection holes CH meet the second electrode EL2. If the capacitance of the second electrode EL2 is designated as C[nF] and the sum of the area of the bottom of the connection holes CH is designated as A[μm2], the formula (1) below is satisfied. C/A<=1.98[nF/μm2] (1) |
