| 摘要 |
The present invention relates to a slit member for an ion implanter and an ion generation apparatus including the same. According to the present invention, a coating structure including a semi-carbide layer for the purposes of stabilization against thermal deformation, protection from abrasion, or resistance to separation of a deposited product is provided to components such as a repeller, a cathode, a chamber well, and a slit member constituting an arc chamber of the ion generation apparatus for ion injection used to manufacture a semiconductor device. Therefore, a precise ion injection process can be performed without distortion of an ion generation location or twist of equipment and electrons can be uniformly reflected to the inside of the arc chamber. Accordingly, a component for an ion implanter, which not only increases efficiency for decomposing ion source gas by increasing uniformity of plasma but also has significantly increased durability compared to an existing component, and the ion generation apparatus including the component for an ion implanter can be provided. |
