| 发明名称 | Semiconductor device | ||
| 摘要 | Provided are a semiconductor device. The semiconductor device includes a memory block including a drain select line, word lines, and a source select line, which are spaced apart from one another and stacked in a direction perpendicular to a semiconductor substrate; and a peripheral circuit including a switching device connected to a bit line, which is disposed under a vertical channel layer vertically passing through the drain select line, the word lines, and the source select line. | ||
| 申请公布号 | US9230981(B2) | 申请公布日期 | 2016.01.05 |
| 申请号 | US201414448832 | 申请日期 | 2014.07.31 |
| 申请人 | SK Hynix Inc. | 发明人 | Oh Sung Lae;Lee Go Hyun;Son Chang Man;Jung Soo Nam |
| 分类号 | G11C16/04;H01L27/115;H01L29/792;G11C5/06;G11C16/08;G11C16/24 | 主分类号 | G11C16/04 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A semiconductor device, comprising: a memory block including a drain select line, word lines, and a source select line, which are spaced apart from one another and stacked in a direction perpendicular to a semiconductor substrate; and a peripheral circuit including a switching device connected to a bit line, which is disposed under a vertical channel layer vertically passing through the drain select line, the word lines, and the source select line. | ||
| 地址 | Gyeonggi-do KR | ||