| 发明名称 | Semiconductor device and fabrication method therefor | ||
| 摘要 | A semiconductor device includes a non-conductive gate feature over a substrate and a spacer adjoining each sidewall of the non-conductive gate feature. | ||
| 申请公布号 | US9230962(B2) | 申请公布日期 | 2016.01.05 |
| 申请号 | US201414189257 | 申请日期 | 2014.02.25 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 发明人 | Tsai Tsung-Chieh;Shih Yung-Che Albert;Ting Jhy-Kang |
| 分类号 | H01L27/092;H01L29/66;H01L21/8238;H01L27/02;H01L21/762;H01L29/06;H01L29/78;H01L29/165 | 主分类号 | H01L27/092 |
| 代理机构 | Hauptman Ham, LLP | 代理人 | Hauptman Ham, LLP |
| 主权项 | 1. A semiconductor device, comprising: a non-conductive gate feature over a substrate; a spacer adjoining each sidewall of the non-conductive gate feature; and an interlayer dielectric (ILD) adjacent to each spacer. | ||
| 地址 | TW | ||