Junction field effect transistors and associated fabrication methods

摘要

A JFET having a semiconductor substrate of a first doping type, an epitaxial layer of the first doping type located on the semiconductor substrate, a body region of a second doping type located in the epitaxial layer, a source region of the first doping type located in the epitaxial layer, a gate region of the second doping type located in the body region, and a shielding layer of the second doping type located in the epitaxial layer, wherein the semiconductor substrate is configured as a drain region, the shielding layer is in a conductive path formed between the source region and the drain region.

主权项

1. A junction field effect transistor, comprising:
a semiconductor substrate of a first doping type, wherein the semiconductor substrate is configured as a drain region; an epitaxial layer of the first doping type located on the semiconductor substrate; a body region of a second doping type located in the epitaxial layer, wherein the second doping type is different from the first doping type; a source region of the first doping type located in the epitaxial layer; a gate region of the second doping type located in the body region; and a shielding layer of the second doping type located in the epitaxial layer, wherein the shielding layer is in a conductive path formed between the source region and the drain region; and wherein the shielding layer is in complementary pattern to the body region.