Semiconductor packages including through electrodes and methods of manufacturing the same

摘要

A semiconductor package includes a substrate and a plurality of semiconductor chips stacked on the substrate. Each of the semiconductor chips has a front surface, a rear surface opposite to the front surface, a sidewall surface connecting the front surface to the rear surface, a vertical through electrode extending from the front surface toward the rear surface with a predetermined depth, and a horizontal through electrode laterally extending from the sidewall surface to be connected to the vertical through electrode. At least one connection member is disposed on the sidewall surfaces of the semiconductor chips to connect the horizontal through electrodes of the semiconductor chips to each other. Related methods are also provided.

主权项

1. A semiconductor package comprising:
a substrate; a plurality of semiconductor chips stacked on the substrate, each of the semiconductor chips having a front surface, a rear surface opposite to the front surface, a sidewall surface connecting the front surface to the rear surface, a through electrode extending from the front surface toward the sidewall surface, wherein the through electrode includes a vertical through electrode and a horizontal through electrode, wherein the vertical through electrode extends from the front surface toward the rear surface with a predetermined depth, but the vertical through electrode does not make contact with the rear surface, and the horizontal through electrode laterally extends from an end of the vertical through electrode toward the sidewall surface, wherein the horizontal through electrode has the same level with the sidewall surface; and at least one connection member disposed on the sidewall surfaces of the semiconductor chips to connect the horizontal through electrode of the through electrodes of the semiconductor chips to each other, wherein vertical through electrodes located at front surfaces, of adjacent semiconductor chips wherein the front surfaces face each other, are directly connected to each other, and wherein horizontal through electrodes located at sidewall surfaces, of semiconductor chips having respective rear surfaces facing each other and adjacent to each other, are coupled through connection members.