Physically unclonable function based on the initial logical state of magnetoresistive random-access memory

摘要

One feature pertains to a method for implementing a physically unclonable function (PUF). The method includes providing an array of magnetoresistive random access memory (MRAM) cells, where the MRAM cells are each configured to represent one of a first logical state and a second logical state. The array of MRAM cells are un-annealed and free from exposure to an external magnetic field oriented in a direction configured to initialize the MRAM cells to a single logical state of the first and second logical states. Consequently, each MRAM cell has a random initial logical state of the first and second logical states. The method further includes sending a challenge to the MRAM cell array that reads logical states of select MRAM cells of the array, and obtaining a response to the challenge from the MRAM cell array that includes the logical states of the selected MRAM cells of the array.

主权项

1. A method for implementing a physically unclonable function (PUF), the method comprising:
providing an array of magnetoresistive random access memory (MRAM) cells, the MRAM cells each configured to represent one of a first logical state and a second logical state, the array of MRAM cells being un-annealed and free from exposure to an external magnetic field oriented in a direction configured to initialize the MRAM cells to a single logical state of the first and second logical states, and consequently each MRAM cell having a random initial logical state of the first and second logical states; sending a challenge to the MRAM cell array that reads logical states of select MRAM cells of the array; and obtaining a response to the challenge from the MRAM cell array that includes the logical states of the selected MRAM cells of the array.