| 发明名称 | Magnetic tunnel junction device and method of making same | ||
| 摘要 | A magnetic tunnel junction (MTJ) device includes a reference layer having a surface, a tunnel insulating layer formed over the surface of the reference layer, a free layer formed over the tunnel insulating layer, and a magnetic field providing layer formed over the free layer. A magnetization direction in each of the reference layer and the free layer is substantially perpendicular to the surface. The magnetic field providing layer is configured to provide a lateral magnetic field in the free layer, the lateral magnetic field being substantially parallel to the surface. | ||
| 申请公布号 | US9231191(B2) | 申请公布日期 | 2016.01.05 |
| 申请号 | US201313901412 | 申请日期 | 2013.05.23 |
| 申请人 | Industrial Technology Research Institute | 发明人 | Huang Sheng-Huang;Shen Kuei-Hung;Wang Yung-Hung |
| 分类号 | G11C11/15;G01R33/09;H01L43/02;H01L43/12;H01L43/08;G11B5/39 | 主分类号 | G11C11/15 |
| 代理机构 | Finnegan, Henderson, Farabow, Garrett & Dunner LLP | 代理人 | Finnegan, Henderson, Farabow, Garrett & Dunner LLP |
| 主权项 | 1. A magnetic tunnel junction (MTJ) device, comprising: a reference layer having a surface; a tunnel insulating layer formed over the surface of the reference layer; a free layer formed over the tunnel insulating layer, a magnetization direction in each of the reference layer and the free layer being substantially perpendicular to the surface; and a magnetic field providing layer formed over the free layer, configured to provide a lateral magnetic field in the free layer, the lateral magnetic field being substantially parallel to the surface, and the magnetic field providing layer including: an isolation spacer layer formed over the free layer:a ferromagnetic layer formed over the isolation spacer layer, a magnetization direction in the ferromagnetic layer being substantially parallel to the surface; andan antiferromagnetic layer formed between the isolation spacer layer and the ferromagnetic layer. | ||
| 地址 | Hsinchu TW | ||