发明名称 |
Light-emitting diode chip |
摘要 |
A light-emitting diode (LED) chip is disclosed. The LED chip includes a substrate and a LED stack on the substrate. The LED stack includes a first-type semiconductor layer, an active layer covering a portion and exposing another portion of the first-type semiconductor layer, and a second-type semiconductor layer on the active layer. A current spreading layer is formed on the second-type semiconductor layer. A first electrode is formed on the exposed portion of the first-type semiconductor layer, and a second electrode is formed on the current spreading layer. The current spreading layer includes a first portion having a first thickness and a second portion having a second thickness. A vertical projection of the second portion onto the first-type semiconductor layer surrounds a vertical projection of a portion of the first electrode onto the first-type semiconductor layer. The first thickness is greater than the second thickness. |
申请公布号 |
US9231165(B2) |
申请公布日期 |
2016.01.05 |
申请号 |
US201414270305 |
申请日期 |
2014.05.05 |
申请人 |
Lextar Electronics Corporation |
发明人 |
Fan Wen-Yuan;Hsu Nai-Wei |
分类号 |
H01L33/14;H01L33/42;H01L33/38 |
主分类号 |
H01L33/14 |
代理机构 |
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代理人 |
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主权项 |
1. A light-emitting diode chip, comprising:
a substrate; a light-emitting diode stack formed on the substrate, wherein the light-emitting diode stack includes:
a first-type semiconductor layer formed on the substrate;an active layer covering a portion of the first-type semiconductor layer and exposing another portion of the first-type semiconductor layer; anda second-type semiconductor layer formed on the active layer; a current-spreading layer formed on the second-type semiconductor layer; a first electrode formed on the exposed portion of the first-type semiconductor layer; and a second electrode formed on the current-spreading layer; wherein the current-spreading layer includes:
a first portion having a first thickness, wherein the second electrode is directly above and contacts a top surface of the first portion; anda second portion having a second thickness, wherein a vertical projection of the second portion onto the first-type semiconductor layer surrounds a vertical projection of a portion of the first electrode onto the first-type semiconductor layer; wherein the first thickness is greater than the second thickness. |
地址 |
Hsinchu TW |