发明名称 Light-emitting diode chip
摘要 A light-emitting diode (LED) chip is disclosed. The LED chip includes a substrate and a LED stack on the substrate. The LED stack includes a first-type semiconductor layer, an active layer covering a portion and exposing another portion of the first-type semiconductor layer, and a second-type semiconductor layer on the active layer. A current spreading layer is formed on the second-type semiconductor layer. A first electrode is formed on the exposed portion of the first-type semiconductor layer, and a second electrode is formed on the current spreading layer. The current spreading layer includes a first portion having a first thickness and a second portion having a second thickness. A vertical projection of the second portion onto the first-type semiconductor layer surrounds a vertical projection of a portion of the first electrode onto the first-type semiconductor layer. The first thickness is greater than the second thickness.
申请公布号 US9231165(B2) 申请公布日期 2016.01.05
申请号 US201414270305 申请日期 2014.05.05
申请人 Lextar Electronics Corporation 发明人 Fan Wen-Yuan;Hsu Nai-Wei
分类号 H01L33/14;H01L33/42;H01L33/38 主分类号 H01L33/14
代理机构 代理人
主权项 1. A light-emitting diode chip, comprising: a substrate; a light-emitting diode stack formed on the substrate, wherein the light-emitting diode stack includes: a first-type semiconductor layer formed on the substrate;an active layer covering a portion of the first-type semiconductor layer and exposing another portion of the first-type semiconductor layer; anda second-type semiconductor layer formed on the active layer; a current-spreading layer formed on the second-type semiconductor layer; a first electrode formed on the exposed portion of the first-type semiconductor layer; and a second electrode formed on the current-spreading layer; wherein the current-spreading layer includes: a first portion having a first thickness, wherein the second electrode is directly above and contacts a top surface of the first portion; anda second portion having a second thickness, wherein a vertical projection of the second portion onto the first-type semiconductor layer surrounds a vertical projection of a portion of the first electrode onto the first-type semiconductor layer; wherein the first thickness is greater than the second thickness.
地址 Hsinchu TW