| 发明名称 | Semiconductor device and fabrication method therefor, and power supply apparatus | ||
| 摘要 | A semiconductor device includes a drift layer having a structure wherein a plurality of quantum dot layers each including a quantum dot containing InxGa1-xN (0≦x≦1) and a burying layer burying the quantum dot and containing n-type Inx(GayAl1-y)1-xN (0≦x≦1, 0≦y≦1) are stacked. | ||
| 申请公布号 | US9231056(B2) | 申请公布日期 | 2016.01.05 |
| 申请号 | US201414242186 | 申请日期 | 2014.04.01 |
| 申请人 | FUJITSU LIMITED | 发明人 | Okamoto Naoya |
| 分类号 | H01L29/06;H01L29/15;H01L29/872;H01L29/812;H01L29/12;H01L29/20;H01L21/8252;H01L27/06;H01L21/28;H01L29/49;H01L29/78;H01L21/02;B82Y10/00;H01L23/00 | 主分类号 | H01L29/06 |
| 代理机构 | Kratz, Quintos & Hanson, LLP | 代理人 | Kratz, Quintos & Hanson, LLP |
| 主权项 | 1. A semiconductor device, comprising: a drift layer having a structure wherein a plurality of quantum dot layers each including a quantum dot containing InxGa1-xN (0≦x≦1) and a burying layer burying the quantum dot and containing n-type Inx(GayAl1-y)1-xN (0≦x≦1, 0≦y≦1) are stacked, a region in which the quantum dots are juxtaposed in a vertical direction in the burying layers of n-type included in the plurality of quantum dot layers being converted into p type. | ||
| 地址 | Kawasaki JP | ||