Fabrication of surface textures by ion implantation for antireflection of silicon crystals

摘要

The invention relates to a new method of texturing silicon surfaces suited for antireflection based on ion implantation of hydrogen and heavy ions or heavy elements combined with thermal annealing or thermal annealing and oxidation. The addition of the heavy ions or heavy elements allows for a more effective anti-reflective surface than is found when only hydrogen implantation is utilized. The methods used are also time- and cost-effective, as they can utilize already existing semiconductor ion implantation fabrication equipment and reduce the number of necessary steps. The antireflective surfaces are useful for silicon-based solar cells.

主权项

1. A method for producing a textured crystalline silicon surface, said method comprising:
providing a crystalline silicon substrate; implanting said silicon substrate with hydrogen ions by ion implantation; implanting said silicon substrate with heavy ions by ion implantation, wherein said heavy ions are selected from argon, krypton, xenon, silicon and germanium ions; and annealing said implanted silicon, wherein said annealing occurs at a temperature between and including 800° C. and 1200° C. for 60 to 90 minutes, inclusive,
wherein said ion implantations are conducted under conditions such that the depth of implantation from the textured crystalline silicon surface for said heavy ions is less than or equal to half of that for said hydrogen ions.