Wafer grounding using localized plasma source

摘要

An apparatus may include a substrate support portion, a plasma generation chamber, electrodes, and a power source. The substrate support portion supports a substrate including an insulating layer and a substrate bulk. The plasma generation chamber may include chamber wall portions, a gas port, and a plasma application aperture and is configured to contain a gas. The plasma application aperture may be covered by a portion of the substrate. Each electrode may protrude into or extend into an interior portion of the plasma generation chamber. The power source may be coupled to a particular electrode, and the power source may be configured to apply a voltage to the particular electrode. Application of the voltage to the particular electrode generates a plasma within the plasma generation chamber, whereby generation of the plasma results in a conductive path through the insulating layer of the substrate between the plasma and the substrate bulk.

主权项

1. An apparatus, comprising:
a substrate support portion configured to support a substrate including at least one insulating layer and a substrate bulk; a plasma generation chamber, the plasma generation chamber being comprised of chamber wall portions, at least one gas port, and a plasma application aperture, wherein the plasma application aperture is covered by a portion of the substrate upon a deposition of the substrate on the substrate support portion, wherein the plasma generation chamber is configured to contain a gas; at least two electrodes including a first electrode and a second electrode, each of the at least two electrodes protruding into or extending into an interior portion of the plasma generation chamber; and at least one power source including at least a first power source, the first power source being coupled to a particular electrode of the at least two electrodes, the first power source being configured to apply a voltage to the particular electrode of the at least two electrodes, wherein application of the voltage to the particular electrode generates a plasma within the plasma generation chamber, whereby generation of the plasma results in a conductive path through the insulating layer of the substrate between the plasma and the substrate bulk.