发明名称 |
Power transistor gate driver |
摘要 |
The present invention relates to a gate driver for a power transistor comprising a first charging path operatively connected between a first voltage supply and a gate terminal of the power transistor for charging the gate terminal to a first gate voltage. A second charging path is connectable between the gate terminal of the power transistor and a second supply voltage to charge the gate terminal from the first gate voltage to a second gate voltage larger or higher than the first gate voltage. A voltage of the second voltage supply is higher than a voltage of the first voltage supply. |
申请公布号 |
US9231583(B2) |
申请公布日期 |
2016.01.05 |
申请号 |
US201214125501 |
申请日期 |
2012.06.13 |
申请人 |
MERUS AUDIO APS |
发明人 |
Høyerby Mikkel;Jakobsen Jørgen Kragh |
分类号 |
H03F3/217;H03K17/687;H02M1/08;H03K17/06 |
主分类号 |
H03F3/217 |
代理机构 |
Sheehan Phinney Bass + Green PA |
代理人 |
Nieves Peter A.;Sheehan Phinney Bass + Green PA |
主权项 |
1. A gate driver for a power transistor, comprising:
a first charging path electrically connectable between a first voltage supply and a gate terminal of the power transistor for charging the gate terminal to a first gate voltage; a second charging path electrically connectable between a second voltage supply and the gate terminal of the power transistor for charging the gate terminal from the first gate voltage to a second gate voltage larger than the first gate voltage; and a controllable discharge path adapted to switch the power transistor to an OFF-state/non-conducting state, wherein the controllable discharge path is connectable between the gate terminal of the power transistor and a source terminal of the power transistor, wherein a voltage of the second voltage supply is higher than a voltage of the first voltage supply. |
地址 |
Herlev DK |