发明名称 Power transistor gate driver
摘要 The present invention relates to a gate driver for a power transistor comprising a first charging path operatively connected between a first voltage supply and a gate terminal of the power transistor for charging the gate terminal to a first gate voltage. A second charging path is connectable between the gate terminal of the power transistor and a second supply voltage to charge the gate terminal from the first gate voltage to a second gate voltage larger or higher than the first gate voltage. A voltage of the second voltage supply is higher than a voltage of the first voltage supply.
申请公布号 US9231583(B2) 申请公布日期 2016.01.05
申请号 US201214125501 申请日期 2012.06.13
申请人 MERUS AUDIO APS 发明人 Høyerby Mikkel;Jakobsen Jørgen Kragh
分类号 H03F3/217;H03K17/687;H02M1/08;H03K17/06 主分类号 H03F3/217
代理机构 Sheehan Phinney Bass + Green PA 代理人 Nieves Peter A.;Sheehan Phinney Bass + Green PA
主权项 1. A gate driver for a power transistor, comprising: a first charging path electrically connectable between a first voltage supply and a gate terminal of the power transistor for charging the gate terminal to a first gate voltage; a second charging path electrically connectable between a second voltage supply and the gate terminal of the power transistor for charging the gate terminal from the first gate voltage to a second gate voltage larger than the first gate voltage; and a controllable discharge path adapted to switch the power transistor to an OFF-state/non-conducting state, wherein the controllable discharge path is connectable between the gate terminal of the power transistor and a source terminal of the power transistor, wherein a voltage of the second voltage supply is higher than a voltage of the first voltage supply.
地址 Herlev DK