发明名称 Amplification device having compensation for a local thermal memory effect
摘要 In one embodiment, an amplification device has a temperature differential sensing circuit that reduces a local thermal memory effect. The amplification device may include an amplification circuit and biasing circuitry. The amplification device is operable to receive an input signal and generate and amplified output signal. The biasing circuitry generates a biasing signal that sets the quiescent operating level of the amplified output signal. The temperature differential sensing circuit provides a bias level adjustment signal that adjusts the biasing signal to maintain the quiescent operating level of the amplified output signal at a desired level.
申请公布号 US9231528(B2) 申请公布日期 2016.01.05
申请号 US201113049215 申请日期 2011.03.16
申请人 RF Micro Devices, Inc. 发明人 Granger-Jones Marcus;Kennan Wayne
分类号 H03F3/04;H03F1/30 主分类号 H03F3/04
代理机构 Withrow & Terranova, P.L.L.C. 代理人 Withrow & Terranova, P.L.L.C.
主权项 1. An amplification device that is capable of reducing thermal drift, comprising: an amplification circuit operable to receive an input signal and generate an amplified output signal from the input signal; biasing circuitry operable to generate a biasing signal and coupled to the amplification circuit wherein the amplification circuit is operably associated with the biasing circuitry so that a quiescent operating level of the amplified output signal is set in accordance with a signal level of the biasing signal; and a temperature differential sensing circuit comprising a mirror circuit configured to detect a temperature difference between a first temperature associated with the amplification circuit and a reference temperature and to generate a bias level adjustment signal based on the temperature difference wherein the biasing circuitry is operably associated with the temperature differential sensing circuit so as to adjust the signal level of the biasing signal in response to the bias level adjustment signal.
地址 Greensboro NC US